In/sub 0.53/Ga/sub 0.47/As光电二极管和In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As hemt在GaAs衬底上的单片集成，用于长波OEIC应用

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049028

J. Jang, G. Cueva, R. Sankaralingam, P. Fay, W. Hoke, I. Adesida

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引用次数: 0

摘要

在相同的GaAs衬底上实现了具有In/sub 0.53/Ga/sub 0.47/As光吸收层和In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As变质hemt的长波双异质结光电二极管。光电二极管具有高速和低漏的特性，并且光电二极管层下的hemt的性能也可与仅hemt异质结构上的hemt相媲美。

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Monolithic integration of In/sub 0.53/Ga/sub 0.47/As photodiodes and In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As HEMTs on GaAs substrates for long wavelength OEIC applications

Metamorphic long wavelength double heterojunction photodiodes with In/sub 0.53/Ga/sub 0.47/As photo-absorption layer and In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As metamorphic HEMTs were realized on the same GaAs substrate. The photodiodes exhibited high speed and low leakage characteristics and the performance of HEMTs beneath the photodiode layers were also comparable to those fabricated on HEMT-only heterostructures.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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