全集成WCDMA SiGeC BiCMOS收发器

Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005. Pub Date : 2005-12-05 DOI:10.1109/ESSCIR.2005.1541674

B. Pellat, J. Blanc, F. Goussin, D. Thevenet, Sandrine Majcherczak, F. Reaute, D. Belot, P. Garcia, P. Persechini, Patrick Cerisier, P. Conti, P. Level, M. Kraemer, A. Granata

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引用次数: 4

摘要

本文介绍了一种采用SiGe-C 0.25um BiCMOS工艺、Ft=60GHz双极晶体管的WCDMA收发器。接收机部分包括集成的零中频射频前端。发射机基于可变中频架构，包括一个64db增益控制。所有需要的锁相环和相关的压控振荡器也被集成。接收器功耗为37mA(含锁相环)，发射器功耗为60mA，均在2.7V电源下，由内部低降稳压器(LDO)直接连接到电池电压。在接收频带内，接收机测量显示总增益为64dB, NF DSB为5db。发射机最大输出功率为- 3dbm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fully-integrated WCDMA SiGeC BiCMOS transceiver

This paper describes a WCDMA transceiver integrated and in a SiGe-C 0.25um BiCMOS process featuring Ft=60GHz bipolar transistor. The receiver part includes integrated zero-IF RF-Front-End. The transmitter is based on Variable IF architecture and includes a 64 dB gain control. All required PLL's and associated VCO's are also integrated. The receiver power consumption is 37mA (PLL included) and the transmitter consumes 60mA both under 2.7V power supply generated by an internal low drop regulator (LDO) directly connected to the battery voltage. Within the receive band, the receiver measurements shown 64dB of overall gain with a 5 dB NF DSB. The transmitter maximum output power is -3 dBm.

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来源期刊

Proceedings of the 31st European Solid-State Circuits Conference, 2005. ESSCIRC 2005.

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