M. Riyadi, Z. Napiah, J. E. Suseno, I. Saad, R. Ismail
{"title":"体掺杂对垂直MOSFET设计的影响","authors":"M. Riyadi, Z. Napiah, J. E. Suseno, I. Saad, R. Ismail","doi":"10.1109/CITISIA.2009.5224233","DOIUrl":null,"url":null,"abstract":"The vertical MOSFET is considered as an alternative to nanoscale device structure, due to relaxed-dependence on lithography and easier double gate realization. In this paper, the influence of body doping concentration variation in vertical MOSFET developed using oblique-rotating implantation (ORI) method is investigated. For this purpose, two-dimensional process simulation was made using TCAD tools for several Nsub, namely 1, 4, 7 ad 10.1018 cm−3, respectively. The electrical characteristic and short channel effect i.e. DIBL and subthreshold swing, for different body doping were deliberated. The result also suggests the required change in the pillar design in maintaining the gate channel.","PeriodicalId":144722,"journal":{"name":"2009 Innovative Technologies in Intelligent Systems and Industrial Applications","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Body doping influence in vertical MOSFET design\",\"authors\":\"M. Riyadi, Z. Napiah, J. E. Suseno, I. Saad, R. Ismail\",\"doi\":\"10.1109/CITISIA.2009.5224233\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The vertical MOSFET is considered as an alternative to nanoscale device structure, due to relaxed-dependence on lithography and easier double gate realization. In this paper, the influence of body doping concentration variation in vertical MOSFET developed using oblique-rotating implantation (ORI) method is investigated. For this purpose, two-dimensional process simulation was made using TCAD tools for several Nsub, namely 1, 4, 7 ad 10.1018 cm−3, respectively. The electrical characteristic and short channel effect i.e. DIBL and subthreshold swing, for different body doping were deliberated. The result also suggests the required change in the pillar design in maintaining the gate channel.\",\"PeriodicalId\":144722,\"journal\":{\"name\":\"2009 Innovative Technologies in Intelligent Systems and Industrial Applications\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-07-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Innovative Technologies in Intelligent Systems and Industrial Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CITISIA.2009.5224233\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Innovative Technologies in Intelligent Systems and Industrial Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CITISIA.2009.5224233","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The vertical MOSFET is considered as an alternative to nanoscale device structure, due to relaxed-dependence on lithography and easier double gate realization. In this paper, the influence of body doping concentration variation in vertical MOSFET developed using oblique-rotating implantation (ORI) method is investigated. For this purpose, two-dimensional process simulation was made using TCAD tools for several Nsub, namely 1, 4, 7 ad 10.1018 cm−3, respectively. The electrical characteristic and short channel effect i.e. DIBL and subthreshold swing, for different body doping were deliberated. The result also suggests the required change in the pillar design in maintaining the gate channel.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
