介质层对电迁移的影响导致了铜互连

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Pub Date : 2003-06-02 DOI:10.1109/IITC.2003.1219703

L. Arnaud, J.F. Guillaumond, O. Pesci, M. Fayolle, G. Reimbold

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引用次数: 2

摘要

电迁移研究表明，在线宽为0.28 /spl mu/m时，以SiOC为侧介质的Cu互连获得了活化能Ea/spl sim/0.9 eV。失效分析表明，Cu/SiO/sub - 2/ Cu/SiO互连材料的电磁扩散路径与Cu/SiO/sub - 2互连材料相似。此外，当使用SiC帽层时，电迁移寿命得到了改善:与SiN帽层相比，寿命增加了0.4 /spl mu/m，增加了4倍。

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Influence of dielectric layers on electromigration results in Cu interconnects

Electromigration studies showed that an activation energy Ea/spl sim/0.9 eV was obtained in Cu interconnects with SiOC as lateral dielectric for linewidths down to 0.28 /spl mu/m. Failure analysis showed similar EM diffusion path in Cu/SiOC interconnects in comparison to Cu/SiO/sub 2/ interconnects. Moreover electromigration lifetime is improved when a SiC cap layer is used: lifetime is increased in 0.4 /spl mu/m by a factor of 4 in comparison to SiN cap layer.

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Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)

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