在GaAs衬底上生长高效率InGaP/GaAs/InGaAs三结太阳能电池的数值模拟

J. Liang, W. D. Hu, X. Chen, C. Xia, L. Cheng
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摘要

对生长在GaAs衬底上的InGaP/GaAs/InGaAs三结太阳能电池的结构参数和光照条件进行了数值研究,以寻找器件性能的最优点。研究了转换效率、I-V曲线和能带图与结构参数和光照条件的关系。我们的工作表明,性能在很大程度上取决于器件的几何设计,并提取了最优参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Numerical simulation of high-efficiency InGaP/GaAs/InGaAs triple-junction solar cells grown on GaAs substrate
The structure parameters and illumination condition for InGaP/GaAs/InGaAs triple-junction solar cells grown on GaAs substrate have been numerically studied to search the optimal point of device performance. The dependences of conversion efficiency, I-V curves, and band diagram on the structure parameters and illumination condition have been investigated. Our work shows that the performances are largely dependent on the geometric design of device and the optimal parameters are extracted.
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