Ivan G. Оrletskyi, E. Maistruk, I. Koziarskyi, D. Koziarskyi
{"title":"喷雾热解制备紫外敏感异质结ZnCoO/n-GaP","authors":"Ivan G. Оrletskyi, E. Maistruk, I. Koziarskyi, D. Koziarskyi","doi":"10.1117/12.2616163","DOIUrl":null,"url":null,"abstract":"The I-V and C-V–characteristics of the isotype Zn1-xCoxO/n-GaP heterojunction fabricated by spray pyrolysis of Zn1-xCoxO thin films on n-GaP crystalline substrates have been investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse currents and the conditions of generating reverse current are analyzed. The dynamics of changes in the capacitive parameters of Zn1-xCoxO thin film based on the C-V–characteristics is established. The photoelectric properties of the heterostructure are analyzed.","PeriodicalId":250235,"journal":{"name":"International Conference on Correlation Optics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"UV sensitive heterojunction ZnCoO/n-GaP prepared by spray pyrolysis\",\"authors\":\"Ivan G. Оrletskyi, E. Maistruk, I. Koziarskyi, D. Koziarskyi\",\"doi\":\"10.1117/12.2616163\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The I-V and C-V–characteristics of the isotype Zn1-xCoxO/n-GaP heterojunction fabricated by spray pyrolysis of Zn1-xCoxO thin films on n-GaP crystalline substrates have been investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse currents and the conditions of generating reverse current are analyzed. The dynamics of changes in the capacitive parameters of Zn1-xCoxO thin film based on the C-V–characteristics is established. The photoelectric properties of the heterostructure are analyzed.\",\"PeriodicalId\":250235,\"journal\":{\"name\":\"International Conference on Correlation Optics\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-12-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Correlation Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2616163\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Correlation Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2616163","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
UV sensitive heterojunction ZnCoO/n-GaP prepared by spray pyrolysis
The I-V and C-V–characteristics of the isotype Zn1-xCoxO/n-GaP heterojunction fabricated by spray pyrolysis of Zn1-xCoxO thin films on n-GaP crystalline substrates have been investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse currents and the conditions of generating reverse current are analyzed. The dynamics of changes in the capacitive parameters of Zn1-xCoxO thin film based on the C-V–characteristics is established. The photoelectric properties of the heterostructure are analyzed.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
