S. Slipchenko, A. Podoskin, A. V. Rozhkov, N. Pikhtin, I. Tarasov, T. Bagaev, M. V. Zverkov, V. Konyaev, Y. V. Kurniavko, M. Ladugin, A. Marmalyuk, A. Padalitsa, V. Simakov
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引用次数: 0
摘要
研究了基于激光异质结构外延集成到晶闸管异质结构的新型ns级高功率激光脉冲发生器。通过施加幅度仅为3.4 a /cm2的控制电流脉冲，产生幅度为28W的激光脉冲。控制信号的最小能量达到1,4 nJ。
Epitaxially intergrated power efficient switch for high power laser pulse generation in semiconductor heterostructures of 900 nm wavelength
New type of high power laser pulse generator of ns-range duration based on epitaxial intergration of laser heterostructure into thyristor heterostructure has been investigated. Generation of laser pulse of 28W amplitude is done by applying a control current pulse with amplitude of 3.4 A/cm2 only. The minimal energy of control signal reaches 1,4 nJ.
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