用于10kv硅基双有源桥变换器的集成漏感中压互感器

Zihan Gao, Haiguo Li, Fred Wang
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引用次数: 3

摘要

由于高压碳化硅(SiC)器件和纳米晶磁性材料的出现,中压(MV)双有源桥(DAB)变换器已经成为一种新兴技术。然而,中压DAB对相移电感和绝缘的要求可能会使变压器和中压DAB变换器的设计复杂化,也会导致更高的损耗和占用更多的空间。本文讨论了6.7 kv /850 v DAB变换器的漏电集成和绝缘技术,满足了中压DAB变换器的电感和绝缘要求。在低压和中压绕组之间插入带气隙的铁氧体铁芯,不会产生高损耗,并对中压绕组进行选择性屏蔽,以避免高寄生,满足绝缘要求。试验结果验证了该设计的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Medium-Voltage Transformer with Integrated Leakage Inductance for 10 kV SiC-Based Dual-Active-Bridge Converter
Medium-voltage (MV) dual-active-bridge (DAB) converters have become an emerging technology thanks to high-voltage silicon carbide (SiC) devices and nanocrystalline magnetic materials. However, the need of phase-shift inductance and insulation requirements for the MV DAB may complicate the design of the transformer and the MV DAB converter, which can also induce higher loss and occupy more space. In this paper, the leakage integration and insulation techniques are discussed for a 6.7-kV/850-V DAB converter, meeting both the inductance and insulation requirements of the MV DAB converter. Ferrite cores with air gaps are inserted between the LV and MV windings without introducing high loss, and the MV winding is selectively shielded to avoid high parasitics and meet the insulation requirement. Test results have verified the effectiveness of this design.
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