基于单片MQW InP/ ingaasp的梳状发生器

C. Renaud, M. Pantouvaki, S. Gregoire, I. Lealman, P. Cannard, R. Gwilliam, A. Seeds
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引用次数: 7

摘要

本文报道了一种采用四元/四元多量子阱InP/InGaAsP材料作为调频(FM)激光器相位调制器和增益介质的单片光频梳发生器。利用量子受限Stark效应产生调制,实现了24.4 GHz的梳线间距。该激光器采用单外延生长步骤和量子阱混合制备,实现了低损耗相位和调制段。由此产生的梳状发生器产生的线的间距正好由调制频率给定,相邻线之间的差分相位噪声在1khz偏移时为-82 dBc/Hz,梳状频谱宽度高达2thz
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Monolithic MQW InP/InGaAsP-Based Comb Generator
We report a monolithic optical frequency comb generator using quaternary/quaternary multiple quantum well InP/InGaAsP material as phase modulator and gain medium in a frequency modulated (FM) laser design. The modulation was generated by quantum confined Stark effect to achieve a comb-line spacing of 24.4 GHz. The laser was fabricated using a single epitaxial growth step and quantum well intermixing to realize low loss phase and modulation sections. The resulting comb generator produces lines with a spacing exactly given by the modulation frequency, differential phase noise between adjacent lines of -82 dBc/Hz at 1 kHz offset and a comb spectrum width of up to 2 THz
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