{"title":"隧道注入振荡器超过200 GHz","authors":"K. Motoya, Y. Okuno, J. Nishizawa","doi":"10.1109/EUMA.1978.332635","DOIUrl":null,"url":null,"abstract":"The tunnel injection increases steeply by the electric field intensity over 1000 kV/cm and the thickness of the tunnel injection region less than 100 Å is suitable for the injection responsible above short millimeter wave where the impact ionization ceases to follow, because of the larger time constant. [3] The Tunnel injection transit time (Tunnett) diode operates in higher frequency region with lower noise level than those of the Impatt diode. Tunnett diode will be useful in higher frequency in the range from 100 to 1000 GHz over the range for GaAs SIT. GaAs Tunnett diodes with p+n and p+ nn+ structures have been fabricated by a new LPE method (TDM under CVP). Oscillation in the circuit from 75 to 325 GHz have been examined and the pulsed fundamental oscillation up to 278 GHz has been obtained from the p+nn+ diode. An output power of about I mW has also been obtained at 200 GHz.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"307 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Tunnel Injection Oscillator Over 200 GHz\",\"authors\":\"K. Motoya, Y. Okuno, J. Nishizawa\",\"doi\":\"10.1109/EUMA.1978.332635\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The tunnel injection increases steeply by the electric field intensity over 1000 kV/cm and the thickness of the tunnel injection region less than 100 Å is suitable for the injection responsible above short millimeter wave where the impact ionization ceases to follow, because of the larger time constant. [3] The Tunnel injection transit time (Tunnett) diode operates in higher frequency region with lower noise level than those of the Impatt diode. Tunnett diode will be useful in higher frequency in the range from 100 to 1000 GHz over the range for GaAs SIT. GaAs Tunnett diodes with p+n and p+ nn+ structures have been fabricated by a new LPE method (TDM under CVP). Oscillation in the circuit from 75 to 325 GHz have been examined and the pulsed fundamental oscillation up to 278 GHz has been obtained from the p+nn+ diode. An output power of about I mW has also been obtained at 200 GHz.\",\"PeriodicalId\":429268,\"journal\":{\"name\":\"1978 8th European Microwave Conference\",\"volume\":\"307 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1978 8th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1978.332635\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1978 8th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1978.332635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The tunnel injection increases steeply by the electric field intensity over 1000 kV/cm and the thickness of the tunnel injection region less than 100 Å is suitable for the injection responsible above short millimeter wave where the impact ionization ceases to follow, because of the larger time constant. [3] The Tunnel injection transit time (Tunnett) diode operates in higher frequency region with lower noise level than those of the Impatt diode. Tunnett diode will be useful in higher frequency in the range from 100 to 1000 GHz over the range for GaAs SIT. GaAs Tunnett diodes with p+n and p+ nn+ structures have been fabricated by a new LPE method (TDM under CVP). Oscillation in the circuit from 75 to 325 GHz have been examined and the pulsed fundamental oscillation up to 278 GHz has been obtained from the p+nn+ diode. An output power of about I mW has also been obtained at 200 GHz.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
