迈向完整的血浆诊断系统

Z. Wu, C. Spanoc
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引用次数: 3

摘要

收集并分析了三种不同来源的等离子体刻蚀信号,包括发射光谱(OES)、射频功率基频和谐波信息以及功率、腔室压力、温度、气体流速等机器信号。CF/sub 2/ OES谱线275 nm和321 nm比其他任何信号都更适合于多蚀刻端点检测。此外,对所有可用信号进行线性逐步回归,得到了良好的晶圆状态预测统计模型。最后,开发了基于句法分析的数据挖掘系统,实现了对数据档案的高效浏览,使用户可以对数据进行定性和定量的分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Towards a complete plasma diagnostic system
Plasma etching signals arising from three different sources are collected and analyzed, including optical emission spectroscopy (OES), RF power fundamental and harmonic information, and machine signals such as power, chamber pressure, temperature, gas flow rate, etc. CF/sub 2/ OES lines 275 nm and 321 nm are found to be better than any other signals for poly-etch endpoint detection. In addition, excellent statistical models for wafer state prediction are obtained by linear stepwise regression on all available signals. Finally a data exploration system, based on syntactic analysis, is developed for efficiently browsing the data archive, allowing users to examine the data both qualitatively and quantitatively.
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