{"title":"一种通过优化n -层厚度和波长来提高PIN光电二极管辐射容忍度的方法","authors":"A. Cédola, M. Cappelletti, E. Y. Blancá","doi":"10.1109/LATW.2010.5550341","DOIUrl":null,"url":null,"abstract":"An iterative method applied to enhance the proton radiation tolerance and the responsivity of PIN photodiodes was developed. The method allows to calculate optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total reverse current of the photodiode and maximize its response to light. The implementation of the method is useful in the design of devices that will not suffer variations from its operation point due to radiation.","PeriodicalId":358177,"journal":{"name":"2010 11th Latin American Test Workshop","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A method for improving the radiation tolerance of PIN photodiodes by optimization of n− layer thickness and light wavelength\",\"authors\":\"A. Cédola, M. Cappelletti, E. Y. Blancá\",\"doi\":\"10.1109/LATW.2010.5550341\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An iterative method applied to enhance the proton radiation tolerance and the responsivity of PIN photodiodes was developed. The method allows to calculate optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total reverse current of the photodiode and maximize its response to light. The implementation of the method is useful in the design of devices that will not suffer variations from its operation point due to radiation.\",\"PeriodicalId\":358177,\"journal\":{\"name\":\"2010 11th Latin American Test Workshop\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 11th Latin American Test Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LATW.2010.5550341\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 11th Latin American Test Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LATW.2010.5550341","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A method for improving the radiation tolerance of PIN photodiodes by optimization of n− layer thickness and light wavelength
An iterative method applied to enhance the proton radiation tolerance and the responsivity of PIN photodiodes was developed. The method allows to calculate optimal values of the intrinsic layer thickness and the incident light wavelength, in function of the light intensity and the maximum proton fluence to be supported by the device. These results minimize the effects of radiation on the total reverse current of the photodiode and maximize its response to light. The implementation of the method is useful in the design of devices that will not suffer variations from its operation point due to radiation.
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