{"title":"宽带60ghz SiGe-BiCMOS矢量调制器,用于超高数据量无线发射机","authors":"M. Hellfeld, C. Carta, F. Ellinger","doi":"10.1109/SIRF.2012.6160145","DOIUrl":null,"url":null,"abstract":"This paper presents the design and characterization of a vector quadrature modulator integrated circuit, fabricated in a 0.25 μm SiGe BiCMOS technology for use in a QPSK wireless transmission system at 60 GHz. The approach chosen for narrowband quadrature generation allows the integration on a 0.98 mm×0.88 mm area, significantly smaller than other reported mm-wave quadrature modulator ICs. The circuit consists of two active double-balanced mixers and a network of transmission lines, whose impedances and lengths are designed to provide simultaneously quadrature differential signals and power matching to 50 Ω for the high-frequency ports of the mixers. On-wafer characterization of the modulator showed an amplitude error of only 0.3 dB and a phase error of 20°, suitable for single-carrier QPSK communications. For optimal operation, the circuit requires -3 dBm of carrier power and 16 mA of bias current from a 3 V supply.","PeriodicalId":339730,"journal":{"name":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Wideband 60 GHz SiGe-BiCMOS vector modulator for ultra-high-datarate wireless transmitters\",\"authors\":\"M. Hellfeld, C. Carta, F. Ellinger\",\"doi\":\"10.1109/SIRF.2012.6160145\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and characterization of a vector quadrature modulator integrated circuit, fabricated in a 0.25 μm SiGe BiCMOS technology for use in a QPSK wireless transmission system at 60 GHz. The approach chosen for narrowband quadrature generation allows the integration on a 0.98 mm×0.88 mm area, significantly smaller than other reported mm-wave quadrature modulator ICs. The circuit consists of two active double-balanced mixers and a network of transmission lines, whose impedances and lengths are designed to provide simultaneously quadrature differential signals and power matching to 50 Ω for the high-frequency ports of the mixers. On-wafer characterization of the modulator showed an amplitude error of only 0.3 dB and a phase error of 20°, suitable for single-carrier QPSK communications. For optimal operation, the circuit requires -3 dBm of carrier power and 16 mA of bias current from a 3 V supply.\",\"PeriodicalId\":339730,\"journal\":{\"name\":\"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIRF.2012.6160145\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIRF.2012.6160145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wideband 60 GHz SiGe-BiCMOS vector modulator for ultra-high-datarate wireless transmitters
This paper presents the design and characterization of a vector quadrature modulator integrated circuit, fabricated in a 0.25 μm SiGe BiCMOS technology for use in a QPSK wireless transmission system at 60 GHz. The approach chosen for narrowband quadrature generation allows the integration on a 0.98 mm×0.88 mm area, significantly smaller than other reported mm-wave quadrature modulator ICs. The circuit consists of two active double-balanced mixers and a network of transmission lines, whose impedances and lengths are designed to provide simultaneously quadrature differential signals and power matching to 50 Ω for the high-frequency ports of the mixers. On-wafer characterization of the modulator showed an amplitude error of only 0.3 dB and a phase error of 20°, suitable for single-carrier QPSK communications. For optimal operation, the circuit requires -3 dBm of carrier power and 16 mA of bias current from a 3 V supply.