单电荷检测器的仿真与设计

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) Pub Date : 1998-10-19 DOI:10.1109/IWCE.1998.742732

G. Iannaccone, C. Ungarelli, M. Macucci

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引用次数: 0

摘要

我们对在GaAs/AlGaAs异质界面的二维电子气体中由量子点和邻近量子点接触组成的系统进行了数值模拟，该系统通过耗尽金属门来定义。正如最近的实验所显示的那样，这样的系统可以作为一种非侵入式探测器，用于检测量子点上的单个电荷的添加或移除。我们计算了点的占用和量子线的电阻作为施加在柱塞栅上的电压的函数，并推导了实现最佳灵敏度的设计准则。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulation and design of a single charge detector

We have performed a numerical simulation of a system made of a quantum dot and a nearby quantum point contact defined, by means of depleting metal gates, in a two-dimensional electron gas at a GaAs/AlGaAs heterointerface. As recent experiments have shown, such a system can be used as a non-invasive detector of single charges being added to or removed from a quantum dot. We have computed the occupancy of the dot and the resistance of the quantum wire as a function of the voltage applied to the plunger gate, and have derived design criteria for achieving optimal sensitivity.

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来源期刊

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)

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