P. Dumon, W. Bogaerts, D. van Thourhout, D. Taillaert, V. Wiaux, S. Beckx, J. Wouters, R. Baets
{"title":"深紫外光刻技术制备SOI光子线中的波长选择元件","authors":"P. Dumon, W. Bogaerts, D. van Thourhout, D. Taillaert, V. Wiaux, S. Beckx, J. Wouters, R. Baets","doi":"10.1109/GROUP4.2004.1416642","DOIUrl":null,"url":null,"abstract":"We demonstrate both ring resonator drop filters and arrayed waveguide gratings in silicon-on-insulator photonic wires. The structures are fabricated in a CMOS line using deep UV lithography and dry etching processes. Waveguide losses are as low as 2.4 dB/cm for a 500 nm wide photonic wire, with excess bend losses of 0.03 dB/90/spl deg/ in a 3 /spl mu/m bend. Using grating fiber couplers for measurements, we show ring and racetrack resonators with a Q up to 12700 and an 8-channel arrayed waveguide grating with a footprint of about 0.1 mm/sup 2/, 3 nm channel spacing and -6 dB crosstalk between channels.","PeriodicalId":299690,"journal":{"name":"First IEEE International Conference on Group IV Photonics, 2004.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Wavelength-selective components in SOI photonic wires fabricated with deep UV lithography\",\"authors\":\"P. Dumon, W. Bogaerts, D. van Thourhout, D. Taillaert, V. Wiaux, S. Beckx, J. Wouters, R. Baets\",\"doi\":\"10.1109/GROUP4.2004.1416642\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate both ring resonator drop filters and arrayed waveguide gratings in silicon-on-insulator photonic wires. The structures are fabricated in a CMOS line using deep UV lithography and dry etching processes. Waveguide losses are as low as 2.4 dB/cm for a 500 nm wide photonic wire, with excess bend losses of 0.03 dB/90/spl deg/ in a 3 /spl mu/m bend. Using grating fiber couplers for measurements, we show ring and racetrack resonators with a Q up to 12700 and an 8-channel arrayed waveguide grating with a footprint of about 0.1 mm/sup 2/, 3 nm channel spacing and -6 dB crosstalk between channels.\",\"PeriodicalId\":299690,\"journal\":{\"name\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"First IEEE International Conference on Group IV Photonics, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2004.1416642\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"First IEEE International Conference on Group IV Photonics, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2004.1416642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Wavelength-selective components in SOI photonic wires fabricated with deep UV lithography
We demonstrate both ring resonator drop filters and arrayed waveguide gratings in silicon-on-insulator photonic wires. The structures are fabricated in a CMOS line using deep UV lithography and dry etching processes. Waveguide losses are as low as 2.4 dB/cm for a 500 nm wide photonic wire, with excess bend losses of 0.03 dB/90/spl deg/ in a 3 /spl mu/m bend. Using grating fiber couplers for measurements, we show ring and racetrack resonators with a Q up to 12700 and an 8-channel arrayed waveguide grating with a footprint of about 0.1 mm/sup 2/, 3 nm channel spacing and -6 dB crosstalk between channels.