深紫外光刻技术制备SOI光子线中的波长选择元件

P. Dumon, W. Bogaerts, D. van Thourhout, D. Taillaert, V. Wiaux, S. Beckx, J. Wouters, R. Baets
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引用次数: 18

摘要

我们演示了环形谐振器下降滤波器和阵列波导光栅在绝缘体上硅光子线。该结构是在CMOS生产线上使用深紫外光刻和干蚀刻工艺制造的。对于500 nm宽的光子线,波导损耗低至2.4 dB/cm,在3 /spl mu/m的弯曲中,多余的弯曲损耗为0.03 dB/90/spl度/。使用光栅光纤耦合器进行测量,我们展示了Q高达12700的环形和赛道谐振器,以及8通道阵列波导光栅,其占地面积约为0.1 mm/sup,通道间距为3 nm,通道之间的串扰为-6 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wavelength-selective components in SOI photonic wires fabricated with deep UV lithography
We demonstrate both ring resonator drop filters and arrayed waveguide gratings in silicon-on-insulator photonic wires. The structures are fabricated in a CMOS line using deep UV lithography and dry etching processes. Waveguide losses are as low as 2.4 dB/cm for a 500 nm wide photonic wire, with excess bend losses of 0.03 dB/90/spl deg/ in a 3 /spl mu/m bend. Using grating fiber couplers for measurements, we show ring and racetrack resonators with a Q up to 12700 and an 8-channel arrayed waveguide grating with a footprint of about 0.1 mm/sup 2/, 3 nm channel spacing and -6 dB crosstalk between channels.
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