基于化学气相沉积生长MoO3微孔板的紫外光电探测器

2019 9th Annual Information Technology, Electromechanical Engineering and Microelectronics Conference (IEMECON) Pub Date : 2019-03-01 DOI:10.1109/iemeconx.2019.8876982

Rahul Kumar, Neeraj Goel, Mahesh Kumar

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引用次数: 1

摘要

具有宽带隙的二维$\alpha$-MoO3半导体材料具有广泛的紫外光探测应用潜力。本文采用化学气相沉积的方法，制备了$\ α $-MoO3微孔板薄膜，并制作了紫外探测器。x射线衍射和拉曼光谱证实了在SiO2/Si衬底上沉积的MoO3薄膜的连续性和结晶性。该器件在紫外光(360 nm)照射下具有~ 500 mA/W的高响应率和超过6的光/暗电流比和显著的快速响应时间。MoO3微孔板的高效紫外检测可归因于耗尽层调制过程。

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Ultraviolet photodetector based on chemical vapor deposition grown MoO3 microplates

Two-dimensional $\alpha$-MoO3 semiconductor material having wide band gap can be potentially used in a wide range of UV-light detection application. Here, we grown the large-scale film composed of $\alpha$-MoO3 microplates by using chemical vapor deposition process and fabricated a UV detector. The X-ray diffraction and Raman spectroscopy confirmed the continuity and crystallinity of the deposited MoO3 film on SiO2/Si substrate. The device exhibited a high responsivity of ~ 500 mA/W and a photo/dark current ratio of over 6 and a significant fast response time under UV-light (360 nm) irradiation. An efficient UV-light detection of the MoO3 microplates can be attributed to the depletion-layer modulation process.

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来源期刊

2019 9th Annual Information Technology, Electromechanical Engineering and Microelectronics Conference (IEMECON)

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