低转换损耗94 GHz和188 GHz倍频InP DHBT技术

2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC) Pub Date : 2017-04-01 DOI:10.1109/INMMIC.2017.7927292

V. Zhurbenko, T. Johansen, M. Squartecchia, V. Midili, O. Rybalko, M. Riet, J. Dupuy, V. Nodjiadjim, A. Konczykowska

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引用次数: 3

摘要

利用磷化铟(InP)双异质结双极晶体管(DHBT)工艺设计了两个覆盖94 GHz和188 GHz频段的倍频器。94 GHz倍频器采用4指dhbt，转换损耗为2db。当倍增器不完全饱和时，测量到的最大输出功率接近3 dBm。直流功耗为132mw。188ghz倍频器采用1指DHBT。在188ghz的片上测量下，转换损耗为2db，最大输出功率为- 1dbm。饱和条件下直流功耗为24mw。两个倍频器都在宽带宽上工作。每个芯片的总电路面积为1.41 mm2。

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Low conversion loss 94 GHz and 188 GHz doublers in InP DHBT technology

An Indium Phosphide (InP) Double Heterojunction Bipolar Transistor (DHBT) process has been utilized to design two doublers to cover the 94 GHz and 188 GHz bands. The 94 GHz doubler employs 4-finger DHBTs and provides conversion loss of 2 dB. A maximum output power of nearly 3 dBm is measured while the doubler is not entirely saturated. The DC power consumption is 132 mW. The 188 GHz doubler utilizes a 1-finger DHBT. Conversion loss of 2 dB and a maximum output power of −1 dBm are achieved at 188 GHz with on-wafer measurements. The DC power consumption is 24 mW under saturated conditions. Both doublers operate over a broad bandwidth. The total circuit area of each chip is 1.41 mm2.

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2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC)

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