77 GHz集成贴片天线,采用0.18µm CMOS技术

Sanjeev Kumar, S. Chatterjee, S. Koul
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引用次数: 0

摘要

本文采用标准的0.18µm CMOS技术,设计了两种标称谐振频率为77 GHz的贴片天线,即薄衬底天线和厚衬底天线。两种天线都采用金属-6。薄基板天线采用金属-5作为接平面,厚基板天线采用金属-1作为接平面。采用0.18µm CMOS工艺制备了薄衬底天线,并对其进行了表征。仅对厚基板天线进行了仿真。薄衬底天线的测量结果表明,在99.8 GHz时,S11峰值为−18.22 dB。仿真结果表明,该天线在77 GHz频段的峰值增益和辐射效率分别为- 25 dB和1%。厚基板天线在77 GHz时的模拟峰值增益和辐射效率分别为5.18 dB和58.31%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
77 GHz integrated patch antennae in 0.18 µm CMOS technology
This paper presents two patch antennae at a nominal resonance frequency of 77 GHz, namely a thin-substrate antenna and a thick-substrate antenna, using a standard 0.18 µm CMOS technology. Both the antennae are implemented on metal-6. The thin-substrate antenna uses metal-5 as the ground plane, and the thick-substrate antenna uses metal-1 as the ground plane. The thin-substrate antenna was fabricated on a 0.18 µm CMOS process and characterized. The thick-substrate antenna was only simulated. Measurements of the thin-substrate antenna show a peak S11 of −18.22 dB at 99.8 GHz. In simulation, the thin-substrate antenna has a peak gain and radiation efficiency of −25 dB and 1% respectively at 77 GHz. The thick-substrate antenna has a simulated peak gain and radiation efficiency of 5.18 dB and 58.31% respectively at 77 GHz.
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