通往1 tb片上存储器的路径,每秒带宽为pb,功率小于5瓦

Swaroop Ghosh
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引用次数: 13

摘要

我们提出了一种实现以前从未尝试过的雄心勃勃的目标的途径:一个太字节的片上存储器以pb /秒的带宽<;5W的功率。片上存储器设计的传统方法是自下而上的,其中位元拓扑和相关外设的选择是预先确定的。由此产生的内存不是最优的,并且经常受到高功率和低带宽的影响。我们从上到下处理这个问题,其中容量,带宽和功率规格指导比特单元的选择。我们的评估表明,域壁存储器(DWM)是一种有潜力的技术,可以满足TB容量和Pb/s带宽的低功耗预算。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Path to a TeraByte of on-chip memory for petabit per second bandwidth with < 5Watts of power
We propose a path to achieve an ambitious target that has never been tried before: a terabyte of on-chip memory for petabit/second of bandwidth with <; 5W of power. Conventional methodology of on-chip memory design is bottom up where the choice of bitcell topology and associated peripherals are predetermined. The resulting memory is sub-optimal and often suffers from high power and poor bandwidth. We approach this problem from top down where the capacity, bandwidth and power specifications guide the choice of bitcell. Our evaluation shows that domain wall memory (DWM) can be a potential technology that can meet TB capacity and Pb/s bandwidth with shoestring power budget.
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