掺铁半绝缘Inp的微缺陷研究

R. Fornari, C. Frigeri, J. Weyher, S. Krawczyk, F. Krafft, G. Mignoni
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引用次数: 1

摘要

在掺铁半绝缘InP中发现了不同的微缺陷:i)位于位错上的非常小的缺陷,ii)相对较大的沉淀嵌入在基体中,周围是铁耗尽的球形体积,iii)在重掺杂的晶体尾部有较大的夹杂物。通过光刻、扫描光致发光、扫描电镜和透射电镜对这些缺陷的研究表明:i)大的夹杂物是由于熔体中铁含量非常丰富时形成的第二相颗粒(FeP、FeP2)的结合,ii)基体析出物可能是铁在收集点周围聚集的结果,iii)小的缺陷在性质上与含铁的缺陷不同,被认为是非常小的析出物或微环。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microdefect Studies of Fe-Doped Semi-Insulating Inp
Different microdefects have been identified in Fe-doped semi-insulating InP: i) very small defects located on dislocations, ii) relatively large precipitates embedded in the matrix, surrounded by a spherical volume depleted of iron, iii) large inclusions in the heavily doped crystal tails. Investigations of these defects by Photoetching, Scanning Photoluminescence, SEM and TEM suggest that: i) the large inclusions are due to incorporation of second-phase particles (FeP, FeP2) which form in the melt as it becomes very rich in iron, ii) the matrix precipitates are possibly the result of iron gathering around a collection point, iii) the small defects are different, in nature, from those containing iron and thought to be either very small precipitates or microloops.
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