新型IrOx/SiO2/W交叉点存储器用于赖氨酸氧化酶样2 (LOXL2)乳腺癌生物标志物检测

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2018-04-01 DOI:10.1109/VLSI-TSA.2018.8403860

S. Jana, S. Samanta, S. Roy, J. Qiu, S. Maikap

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引用次数: 0

摘要

新型IrOx/SiO2/W 10x10µm2交叉点结构首次用于高密度电阻性记忆以及尿素/LOXL2传感。通过x射线光电子能谱(XPS)分析证实了Ir0/Ir3+/Ir4+的氧化态。在200 nA的低电流顺应性(CC)下获得了> 1000次的直流续航时间，在100 ns的小脉冲宽度下获得了>1010次的长程序/擦除(P/E)续航时间。在99.45%的线性度下，获得了140 mV/pH的超能值灵敏度，并通过多孔IrOx膜获得了低浓度为1 pM的LOXL2。

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Novel IrOx/SiO2/W cross-point memory for lysyl-oxidase-like-2 (LOXL2) breast cancer biomarker detection

Novel IrOx/SiO2/W 10x10 µm² cross-point structure has been introduced for high-density resistive memory as well as urea/LOXL2 sensing for the first time. The Ir⁰/Ir³⁺/Ir⁴⁺ oxidation states are confirmed by X-ray photo-electron spectroscopy (XPS) analysis. A dc endurance of > 1000 cycles at low current compliance (CC) of 200 nA and long program/erase (P/E) endurance of >10¹⁰ cycles with a small pulse width of 100 ns are obtained. Super-nernstian pH sensitivity of 140 mV/pH with 99.45% linearity, and LOXL2 with a low concentration of 1 pM through porous IrOx membrane are obtained.

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2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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