退化感知模拟设计流程,用于终身良率分析和优化

X. Pan, H. Graeb
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引用次数: 14

摘要

随着集成电路技术的不断缩小,晶体管参数将由于工艺引起的变化和时间相关的退化而偏离其标称值。虽然可靠性问题直接影响新电路的成品率,但可靠性问题将在寿命期间造成额外的成品率损失。因此,在设计阶段早期预测电路的寿命产率是非常必要的。同时考虑工艺变化和寿命退化,本文提出了一种基于最坏情况距离分析和优化寿命良率值的新框架,该框架采用最先进的可靠性模拟器和设计定心软件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Degradation-aware analog design flow for lifetime yield analysis and optimization
As integrated circuit technology scales down continuously, transistor parameters will shift from their nominal values due to process-induced variations and time-dependent degradations. While the former issue contributes directly to the production yield of the fresh circuit, the reliability issue will cause an additional yield loss during the lifetime. Thus the prediction of the circuit's lifetime yield is highly necessary early in the design phase. Considering both process variation and lifetime degradation together, this paper presents a novel framework to analyze and optimize the lifetime yield value based on worst-case distances using exemplary state of the art reliability simulator and design centering software.
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