Modelling Microwave Optical And Charge Carrier Effects In High-speed Optoelectronic Devices And Circuits Using The Method Of Lines And The Monte Carlo Method

This paper presents a discussion of two numerical techniques and a description of their use for modelling electromagnetic wave propagation and charge carrier effects present in high-speed optoelectronic devices and circuits. The Method of Lines is used to compute the microwave and optical mode propagation characteristics of optoelectronic circuits while the Monte Carlo Method is used to simulate charge carrier 'trans port phenomena in devices. Results are presented to to demonstrate the power of these rigorous numerical modelling tools.