一种用于W-CDMA的0.13 μm CMOS堆叠折叠全差分PA结构

Y. Luque, E. Kerhervé, N. Deltimple, D. Belot
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引用次数: 2

摘要

本文介绍了采用意法半导体0.13 μ m CMOS技术实现功率放大器的可行性。它是为UMTS W-CDMA标准设计的。该功率放大器在1.95 GHz时提供33 dBm的最大输出功率和60%的功率附加效率(PAE)。该标准要求从-20 dBm到24 dBm输出功率的线性度。线性增益16.7 dB,压缩点(OCP1) 28.25 dBm。为了满足UMTS W-CDMA规范,特别是在线性方面,在线性类操作中需要达到最大输出功率24dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 0.13 μm CMOS stacked folded fully differential PA structure for W-CDMA Application
This paper describes the feasibility of a power amplifier (PA) in 0.13mum CMOS technology from STMicroelectronics. It is designed for the UMTS W-CDMA standard. This power amplifier provides 33 dBm maximal output power with 60% of power added efficiency (PAE) at 1.95 GHz. This standard requires linearity from -20 dBm till 24 dBm output power. The linear gain is 16.7 dB and the compression point (OCP1) is 28.25 dBm. In order to fulfil UMTS W-CDMA specifications, especially on linearity, the maximum 24dBm of output power required are reached in a linear class of operation.
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