二硫化钼基器件的漏极电流模拟

2019 International Conference on Smart Systems and Inventive Technology (ICSSIT) Pub Date : 2019-11-01 DOI:10.1109/ICSSIT46314.2019.8987828

J. Pravin, B.Rushi Keshava Reddy, C. Saikumar, H. Sandeep

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引用次数: 0

摘要

本文提出了二硫化钼基晶体管的数值模型。所提出的结构以二硫化钼(MoS2)为通道材料，SiO2为栅氧化物材料。利用我们提出的模型证明了二硫化钼的输出特性。与硅相比，MoS2沟道材料由于其更大的带隙、高迁移率和低功耗而提供更好的漏极电流。利用技术计算机辅助设计(TCAD)仿真软件对二硫化钼材料的IV特性进行了测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Drain Current Simulation of Molybdenum Disulfide Based Devices

This paper presents the numerical model of MoS2 based transistor. The proposed structure having Molybdenum disulphide (MoS2) as channel material and SiO2 as gate oxide material. Output characteristics of MoS2 have been demonstrated using our proposed model. Compared with silicon, the MoS2 channel material provides the better drain current due to its larger band gap, high mobility and low power consumption. The IV Characteristics for the MoS2 material was measured by using the Technology Computer Aided Design (TCAD) simulation software.

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来源期刊

2019 International Conference on Smart Systems and Inventive Technology (ICSSIT)

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