非均匀二极管结构的OCVD载流子寿命测量

2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) Pub Date : 2002-08-07 DOI:10.1109/MIEL.2002.1003220

Vitezslav Benda, Zdenek Novak

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引用次数: 8

摘要

本文研究了用OCVD(开路电压衰减)法在非均匀载流子寿命分布结构上测量载流子寿命的问题。一个简单的模型，两个二极管并联连接(集中电荷近似)已被用于评估所测量的载流子寿命。理论分析得到了实验验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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OCVD carrier lifetime measurements on an inhomogeneous diode structure

This paper investigates the problem of evaluating the lifetime of a carrier measured by the OCVD (open circuit voltage decay) method on structures with a non-uniform carrier lifetime distribution. A simple model of two diodes connected in parallel (lumped charge approximation) has been used for evaluating the measured carrier lifetime. The theoretical analysis was experimentally verified.

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2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)

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