3.5 GHz全集成功率放大器模块

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191) Pub Date : 2001-10-21 DOI:10.1109/GAAS.2001.964358

P. Blount, J. Cuggino, J. McPhee

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引用次数: 2

摘要

在本文中，我们提出了一种工作在s波段的最先进的功率放大器模块。该功率模块由3.5 GHz的InGaP HBT MMIC放大器组成，该放大器使用标准表面贴装组件集成了必要的偏置和输出匹配网络。因此，该模块在输入和输出端口上是真正的50 /spl ω /匹配，不需要外部电路。该模块选择的技术是一种低成本、高容量的球栅阵列(BGA)技术，该技术广泛应用。电源模块的峰值输出功率为27.5 dBm，单个+ 5v电源的功率增加效率为44%。

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A 3.5 GHz fully integrated power amplifier module

In this paper we present a state-of-the-art Power Amplifier module operating at S-band. The power module consists of an InGaP HBT MMIC amplifier at 3.5 GHz with the necessary bias and output matching networks integrated using standard surface mount components. As such the module is truly 50 /spl Omega/ matched at input and output ports with no external circuitry required. The technology chosen for the module is a low cost, high volume ball grid array (BGA) technology, which is widely available. The power module gave a peak output power of 27.5 dBm and a power added efficiency of 44% from a single +5 V supply.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)

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