纳米互连中的电阻率分析:全范围(4.2-300 K)温度表征

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Pub Date : 2003-06-02 DOI:10.1109/IITC.2003.1219733

J.F. Guillaumond, L. Arnaud, T. Mourier, M. Fayolle, O. Pesci, G. Reimbold

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引用次数: 18

摘要

在低于100 nm的特征尺寸和4.2 K下，进行了damascene铜线电阻率随线宽和温度的函数表征。采用Mayadas晶界和侧壁散射模型对实验数据进行了分析。该模型与实验结果吻合较好。强调了分离不同电子散射机制的困难。然而。所有的结果都清楚地表明，ITRS路线图目前的要求在不久的将来不会得到尊重。

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Analysis of resistivity in nano-interconnect: full range (4.2-300 K) temperature characterization

The characterisation of the damascene copper line resistivity as a function of linewidth and temperature were carried out for sub 100 nm feature size and down to 4.2 K. Mayadas model for grain boundary and sidewall scattering was used to analyse experimental data. The model is found to be in good agreement with experiment. The difficulty to isolate the different electron scattering mechanisms is highlighted. However. all the results show clearly that ITRS roadmap present requirement will not be respected in a close future.

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来源期刊

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)

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