非隔离LED降压变换器中基于gan的高电压肖特基二极管

2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) Pub Date : 2016-09-01 DOI:10.1109/EPE.2016.7695316

A. Zibold, R. Reiner, Beatrix Weis, M. Kunzer, R. Quay, J. Wagner, P. Waltereit, O. Ambacher

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引用次数: 1

摘要

这项工作证明了AlGaN/GaN-on-Si肖特基二极管在LED应用的非隔离降压变换器中的适用性。据作者所知，这是AlGaN/GaN-on-Si肖特基二极管首次被用作非隔离降压变换器中的反激二极管。首先，具体地开发和表征了二极管。随后，二极管在用于LED模块的先进非隔离降压变换器中进行了测试。对电路进行了表征，并讨论了该方法，并与最先进的解决方案进行了比较。

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High voltage GaN-based Schottky diodes in non-isolated LED buck converters

This work demonstrates the suitability of AlGaN/GaN-on-Si Schottky diodes in a non-isolated buck converter for LED applications. To the authors' knowledge, this is the first time that AlGaN/GaN-on-Si Schottky diodes have been employed as flyback diodes in a non-isolated buck converter. First the diodes are specifically developed and characterized. Afterwards the diodes are tested in an advanced non-isolated buck converter for LED modules. The circuit is characterized and the approach is discussed and compared to state-of-the-art solutions.

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来源期刊

2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe)

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