GaAs/AlGaAs LED表面具有方形对称的二维光子结构

2012 ELEKTRO Pub Date : 2012-05-21 DOI:10.1109/ELEKTRO.2012.6225679

L. Suslik, D. Pudiš, J. Škriniarová, J. Kovác, I. Kubicová, I. Martincek, J. Novák, S. Hascik

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引用次数: 0

摘要

本文研究了二维光子模式对波长为850 nm的GaAs/AlGaAs基发光二极管(LED)发射特性的影响。对于LED表面图案化，采用双光束干涉法的双曝光干涉光刻技术。利用原子力显微镜对制备的LED表面的光子结构进行了分析。所制备的具有二维图像化光子结构的LED光提取效率显著提高，远场辐射方向图得到改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2D photonic structure with square symmetry in the GaAs/AlGaAs LED surface

In this paper, effect of 2D photonic pattern on the emission properties of the GaAs/AlGaAs based light emitting diode (LED) emitting at wavelength of 850 nm is demonstrated. For LED surface patterning, the interference lithography based on a double-exposure process using two-beam interference method was used. The prepared photonic structure pattern in the LED surface was analyzed by atomic force microscope. Such prepared LED with 2D patterned photonic structure shows considerable enhancement of light extraction efficiency and improved far-field radiation pattern.

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来源期刊

2012 ELEKTRO

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