一个10.4-ENOB 120MS/s SAR ADC,在90nm CMOS上进行DAC线性校准

Yan Zhu, Chi-Hang Chan, U. Seng-Pan, R. Martins
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引用次数: 19

摘要

本文提出了一种用于SAR ADC的DAC线性度校准和分相位寄存器。该校准校正了桥式DAC结构在数字域的转换非线性,从而提高了精度和对比较偏移的不敏感性。此外,还提出了一种分相位寄存器来优化数字电路的速度。通过在120MS/s和1.2V电源下工作的90nm CMOS原型获得的测量结果显示,SNDR为64.3dB,功耗为3.2mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 10.4-ENOB 120MS/s SAR ADC with DAC linearity calibration in 90nm CMOS
This paper proposes a DAC linearity calibration and a phase-splitting bit register for a SAR ADC. The calibration corrects the conversion nonlinearity of the bridge DAC structure in the digital domain leading to higher accuracy and insensitivity to comparison offset. Moreover, a phase-splitting bit register is presented to optimize the speed of the digital circuitry. Measurements obtained from a 90nm CMOS prototype operating at 120MS/s and 1.2V supply achieve a SNDR of 64.3dB with 3.2mW power dissipation.
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