多电压SOI-BiCDMOS，用于14v和42v汽车应用

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239874

F. Kawai, T. Onishi, T. Kamiya, H. Ishimabushi, H. Eguchi, K. Nakaharna, H. Aoki, K. Hamada

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引用次数: 25

摘要

本文介绍了一种新型的多电压SOI-BiCDMOS，重点介绍了“功率MOSFET和BJT丰富的汽车应用”。该技术可将35 V/60 V/80 V击穿电压的Nch LDMOS和Pch LDMOS、高封装密度的深沟隔离BJTs、低成本的0.8 /spl mu/m CMOS集成在单个芯片上。这六种类型的LDMOS可以同时制造，只需在CMOS工艺上增加两个掩模，并且这些LDMOS具有低的比导通电阻和良好的SOA。此外，该技术还采用了直径为200mm的键合SOI晶圆，以降低芯片成本。

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Multi-voltage SOI-BiCDMOS for 14V&42V automotive applications

This paper presents a new multi-voltage SOI-BiCDMOS, which particularly focuses on "power MOSFET and BJT rich automotive applications". This technology can integrate Nch LDMOS and Pch LDMOS which have 35 V/60 V/80 V breakdown voltages, high packing density deep trench isolated BJTs, and a low cost 0.8 /spl mu/m CMOS, on a single chip. The six types of LDMOS can be simultaneously fabricated with only two additional masks to a CMOS process, and these LDMOSs satisfy both low specific on-resistance and good SOA. Furthermore, in this technology, a bonded SOI wafer with 200 mm diameter has been newly adopted in order to reduce chip cost.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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