65纳米CMOS mmic的设计要点

M. Karkkainen, M. Varonen, D. Sandstrom, T. Tikka, S. Lindfors, K. Halonen
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引用次数: 4

摘要

我们提出了在65纳米CMOS中实现毫米波电路的设计方面和技术。讨论了不同的传输线拓扑结构,并给出了在65nm CMOS中实现的传统共面波导和慢波共面波导的测量结果。采用慢波共面波导可以减小片上传输线的衰减。提出了一种采用电感作为匹配元件的65nm CMOS级联放大器。放大器的片上互连采用共面波导实现并建模。共面波导的接平面为整个电路提供了良好的接地参考。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design Aspects of 65-nm CMOS MMICs
We present design aspects and techniques for millimeter-wave circuits implemented in 65-nm CMOS. Different transmission line topologies are discussed and measurement results for a conventional coplanar waveguide and slow-wave coplanar waveguide implemented in 65-nm CMOS are shown. The attenuation of the on-chip transmission lines can be reduced by using slow-wave coplanar waveguides. A 1-stage cascode amplifier in 65-nm CMOS employing inductors as matching elements is presented. On-chip interconnections of the amplifier are implemented and modeled using coplanar waveguides. The ground plane of the coplanar waveguide provides a good ground reference for the entire circuit.
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