纳米晶体存储器中的局部电荷存储:多比特单元的可行性

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Pub Date : 2003-09-16 DOI:10.1109/ESSDERC.2003.1256818

D. Corso, I. Crupi, V. Ancarani, G. Ammendola, G. Molas, L. Perniola, S. Lombardo, C. Gerardi, B. De Salvo

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引用次数: 10

摘要

我们已经实现了硅纳米晶记忆电池，其中硅点通过化学气相沉积(CVD)沉积在隧道氧化物上，然后由CVD控制氧化物覆盖。在本文中，我们报告了这种类型的电池的多比特存储的潜力的研究。特别地，从程序/擦除机制、持久性和电荷保留的角度显示和讨论了这些器件提供的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Localized charge storage in nanocrystal memories: feasibility of a multi-bit cell

We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cell for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.

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来源期刊

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.

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