直接隧穿条件下TDDB寿命预测的门电压依赖模型

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) Pub Date : 2001-06-12 DOI:10.1109/VLSIT.2001.934968

M. Takayanagi, S. Takagi, Y. Toyoshima

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引用次数: 2

摘要

本文进行了系统的实验，定量地了解了TDDB在直接隧道下的栅极电压标度。发现ln T/ BD/的斜率与V/下标ox/呈非线性关系。基于阳极注入孔(AHI)的概念，提出了一个简单的模型来解释实验电压加速因子。根据模型预测，在实际工作电压条件下，1.8 nm栅极氧化物仍然是可靠的。

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Gate voltage dependent model for TDDB lifetime prediction under direct tunneling regime

Systematic experiments are carried out in this paper for quantitative understanding of gate voltage scaling for TDDB under the direct tunneling regime. It is found that the slope of ln T/sub BD/ has a nonlinear relationship to V/sub ox/. A simple model to explain the experimental voltage acceleration factor is proposed based on the anode hole injection (AHI) concept. It is shown, according to model prediction, that the 1.8 nm gate oxide is still reliable under real operational voltage conditions.

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来源期刊

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)

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