Ashu Yadav, A. Bulusu, Sudeb Dasgupta, Surinder Singh
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引用次数: 0
摘要
本文采用亚阈值MOS器件，设计了一种与绝对温度(PTAT)成比例的CMOS传感器，PTAT输出为1Vpp，以匹配下一阶段数据采集系统的动态范围。该电路首先使用SPICE在- 40°C至125°C的宽温度范围内使用0.18μm CMOS器件参数进行评估。该器件的晶片面积为0.013mm2 (=170 μ m X 78 μ m)，功耗小于15 μ W，电源为3.3V。对PTAT进行了辐射效应表征和分析。
Design and Fabrication of Rad-hard Low Power CMOS Temperature Sensor for Space Applications at 180nm
In this paper we presented a CMOS proportional to absolute temperature (PTAT) sensor using subthreshold MOS devices and output of PTAT is 1Vpp to match the dynamic range of next stage data acquisition systems. The circuit is first evaluated using SPICE with 0.18μm CMOS device parameters across a wide-temperature range from −40°C to 125°C. The fabricated device occupies a die area of 0.013mm2 (=170µm X 78µm) and consumes power less than 15µW with 3.3V power supply. Radiation effects characterization and analysis has been done on PTAT.
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