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一系列相位稳定的低噪声放大器

13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003. Pub Date : 1900-01-01 DOI:10.1109/CRMICO.2003.158796
V. Khitko, A.F. Kovalenko, A. Pavlyuchik, A.S. Ignatenko
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引用次数: 0

摘要

本文介绍了1-2 GHz、2-4 GHz、4-8 GHz、8-12 GHz相稳低噪声GaAs MESFET放大器的开发和研究成果。给出了该放大器的计算性能和实验性能。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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A range of phase-stable low-noise amplifiers
The paper presents the results of developing and researching a range of 1-2, 2-4, 4-8, 8-12 GHz phase-stable low-noise GaAs MESFET amplifiers. The calculated and experimental performance of the amplifiers is shown.
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来源期刊
13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003.
13th International Crimean Conference Microwave and Telecommunication Technology, 2003. CriMiCo 2003.
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