Novel a-Si:H Gate Driver Circuit with High Charging and Discharging Speeds for Use in High-resolution Liquid-Crystal Displays

This work proposes a novel gate driver circuit based on hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) technologies. Since the gate voltage of the driving TFT is increased by the proposed pre-bootstrapping structure for enhancing its driving capability, the issue of low mobility of a-Si:H TFT is improved. Thus, the high charging and discharging speeds of the output node are certified. Simulation results show that the voltage levels at the gate node of the driving TFT are increased to 21.49 V and43.03 V before the output waveform starts to rise and fall, ensuring that the proposed circuit can fast charge and discharge the output node through the driving TFT.