用于超高数据速率无线通信的次太赫兹300GHz CMOS放大器

2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2020-09-01 DOI:10.1109/RFIT49453.2020.9226172

K. K. Tokgoz, K. Okada

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引用次数: 1

摘要

本文提出了一种基于65nm标准体CMOS的300GHz放大器。放大器的增益范围为273 ~ 301GHz, 298GHz时的峰值增益为21dB。放大器具有16级正反馈共源拓扑结构。1.2V电源的功耗为35.4mW。晶体管(1μm×8)布局优化，最大限度地减少栅极和通道电阻，将增益角频率从250GHz(基于传统设计套件的晶体管测量结果)增加到270GHz， $f$max从大约300GHz(基于设计套件)增加到317GHz。直流阻断电容器采用10fF指形设计，具有比传统MOM电容器更低的损耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Sub-Terahertz 300GHz Amplifier on CMOS for Ultra-High Data-Rate Wireless Communications

This work presents a 300GHz amplifier in 65-nm standard bulk CMOS. The amplifier has gain from 273 to 301GHz, and the peak gain is 21dB at 298GHz. The amplifier has 16-stage positive-feedback common-source topology. The power consumption is 35.4mW from a 1.2V supply. Transistor (1μm×8) layout is optimized for minimizing gate and channel resistance to increase gain corner frequency from 250GHz (conventional design kit-based transistor measurement result) to 270GHz, and $f$max from around 300GHz (design kit based) up to 317GHz. The DC-blocking capacitors are 10fF finger-based design which has lower loss than conventional MOM capacitors.

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2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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