Sangyeop Lee, R. Dong, T. Yoshida, S. Amakawa, S. Hara, A. Kasamatsu, J. Sato, M. Fujishima
{"title":"9.5 80Gb/s 300ghz波段单片CMOS收发器","authors":"Sangyeop Lee, R. Dong, T. Yoshida, S. Amakawa, S. Hara, A. Kasamatsu, J. Sato, M. Fujishima","doi":"10.1109/ISSCC.2019.8662314","DOIUrl":null,"url":null,"abstract":"IEEE Standard 802.15.3d, published in October 2017, defines a high-data-rate wireless physical layer that enables up to 100Gb/s using the lower THz frequency range between 252 and 325GHz (hereafter referred to as the “300GHz band”). It stipulates that the 300GHz band be channelized into thirty-two 2.16GHz-wide channels (Fig. 9.5.1) or a smaller number of wider channels whose bandwidths are all integer multiples of 2.16GHz. This paper presents a CMOS transceiver (TRX) chip targeted at channels 49 through 51 and 66 of 802.15.3d (Fig. 9.5.1). The TRX was fabricated using a 40nm CMOS process. There have been reports on solid-state transceivers (TRXs) operating in or near the 300GHz band [1]–[6]. Some of these [1]–[3] were TX/RX or block-level chipsets, which can enjoy more flexibility in design and independent optimization of TX and RX. They successfully achieved $\\geq 64$ Gb/s. On the other hand, single-chip TRXs [4]–[6] did not always reveal achievable data-rates nor were capable of supporting quadrature amplitude modulation (QAM). Nevertheless, eventual development of full-featured single-chip TRXs is desirable especially for applications requiring deployment of many TRXs, as is envisioned implicitly by 802.15.3d. The single-chip QAM-capable CMOS TRX presented herein is an outcome of efforts in that direction.","PeriodicalId":265551,"journal":{"name":"2019 IEEE International Solid- State Circuits Conference - (ISSCC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"131","resultStr":"{\"title\":\"9.5 An 80Gb/s 300GHz-Band Single-Chip CMOS Transceiver\",\"authors\":\"Sangyeop Lee, R. Dong, T. Yoshida, S. Amakawa, S. Hara, A. Kasamatsu, J. Sato, M. Fujishima\",\"doi\":\"10.1109/ISSCC.2019.8662314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"IEEE Standard 802.15.3d, published in October 2017, defines a high-data-rate wireless physical layer that enables up to 100Gb/s using the lower THz frequency range between 252 and 325GHz (hereafter referred to as the “300GHz band”). It stipulates that the 300GHz band be channelized into thirty-two 2.16GHz-wide channels (Fig. 9.5.1) or a smaller number of wider channels whose bandwidths are all integer multiples of 2.16GHz. This paper presents a CMOS transceiver (TRX) chip targeted at channels 49 through 51 and 66 of 802.15.3d (Fig. 9.5.1). The TRX was fabricated using a 40nm CMOS process. There have been reports on solid-state transceivers (TRXs) operating in or near the 300GHz band [1]–[6]. Some of these [1]–[3] were TX/RX or block-level chipsets, which can enjoy more flexibility in design and independent optimization of TX and RX. They successfully achieved $\\\\geq 64$ Gb/s. On the other hand, single-chip TRXs [4]–[6] did not always reveal achievable data-rates nor were capable of supporting quadrature amplitude modulation (QAM). Nevertheless, eventual development of full-featured single-chip TRXs is desirable especially for applications requiring deployment of many TRXs, as is envisioned implicitly by 802.15.3d. The single-chip QAM-capable CMOS TRX presented herein is an outcome of efforts in that direction.\",\"PeriodicalId\":265551,\"journal\":{\"name\":\"2019 IEEE International Solid- State Circuits Conference - (ISSCC)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"131\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Solid- State Circuits Conference - (ISSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2019.8662314\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Solid- State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2019.8662314","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
9.5 An 80Gb/s 300GHz-Band Single-Chip CMOS Transceiver
IEEE Standard 802.15.3d, published in October 2017, defines a high-data-rate wireless physical layer that enables up to 100Gb/s using the lower THz frequency range between 252 and 325GHz (hereafter referred to as the “300GHz band”). It stipulates that the 300GHz band be channelized into thirty-two 2.16GHz-wide channels (Fig. 9.5.1) or a smaller number of wider channels whose bandwidths are all integer multiples of 2.16GHz. This paper presents a CMOS transceiver (TRX) chip targeted at channels 49 through 51 and 66 of 802.15.3d (Fig. 9.5.1). The TRX was fabricated using a 40nm CMOS process. There have been reports on solid-state transceivers (TRXs) operating in or near the 300GHz band [1]–[6]. Some of these [1]–[3] were TX/RX or block-level chipsets, which can enjoy more flexibility in design and independent optimization of TX and RX. They successfully achieved $\geq 64$ Gb/s. On the other hand, single-chip TRXs [4]–[6] did not always reveal achievable data-rates nor were capable of supporting quadrature amplitude modulation (QAM). Nevertheless, eventual development of full-featured single-chip TRXs is desirable especially for applications requiring deployment of many TRXs, as is envisioned implicitly by 802.15.3d. The single-chip QAM-capable CMOS TRX presented herein is an outcome of efforts in that direction.