用缓速场能量分析仪测量离子能量分布,用低能量离子对Cl2进行Si-ALE

Nils Dittmar, B. Berger, M. Melzer, M. Küchler, C. Meinecke, M. Haase, D. Reuter
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引用次数: 0

摘要

为了最大限度地减少底层材料的蚀刻损伤,采用低能离子原子层蚀刻(ALE)来结构硅。用缓速场能量分析仪测定了离子能量分布。该蚀刻工具在140 W偏置功率下获得了136 eV的最大离子能量,在没有施加偏置功率的情况下获得了11.1 eV的平均离子能量。等离子体增强ALE包括Cl2吸附和Ar脱附步骤。偏置功率在8w到22w之间变化。观察到每个周期(平均超过30个周期)的蚀刻在8 W (~12 eV)下最小(~0.3 nm),在19 W (~23 eV)偏置功率下最大(~14 nm)。原子力显微镜测量显示粗糙的蚀刻地面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Measuring Ion Energy Distributions by Retarding Field Energy Analyzer and Using Low-Energy Ions for Si-ALE by Cl2
To minimize etching damage of the underlying material, atomic layer etching (ALE) with low-energy ions was used for structuring silicon. The ion energy distribution was determined using a retarding field energy analyzer. The etching tool achieved a maximal ion energy of 136 eV at 140 W bias power and an average ion energy of 11.1 eV without applied bias power. The plasma-enhanced ALE included a Cl2 adsorption and an Ar desorption step. The bias power was varied between 8 W and 22 W. The observed etch per cycle (averaged over 30 cycles) was minimal (~0.3 nm) at 8 W (~12 eV) and maximal (~14 nm) at 19 W (~23 eV) bias power. Atomic force microscopy measurements revealed rough etch grounds.
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