用于开关滤波器的高性能slcfet

J. Parke, R. Freitag, M. Torpey, R. Howell, E. Stewart, M. Snook, I. Wathuthanthri, Shalini Gupta, B. Nechay, M. King, P. Borodulin, K. Renaldo, H. G. Henry
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引用次数: 6

摘要

由于与其他技术相比,基于fet的开关滤波器损耗高,因此在文献中没有占据很大的空间。超晶格场效应晶体管(SLCFET)是一种低损耗、高隔离的宽带射频开关,可以满足这种需求。为了演示SLCFET在该应用中的使能能力,制作了一个在分频/合并网络中使用SLCFET开关的4通道可调谐带通滤波器。每个滤波状态采用一种新颖的高q LC电路。MMIC通带的插入损耗约为-6.5 dB,其中-1.3 dB归因于网络中的6个单极双掷(SPDT)开关。分离spdt的测量范围从0.5 GHz到25 GHz。在该晶圆上的35个spdt,在18 GHz时测量的插入损耗为-0.41±0.1 dB,隔离度为-28.8±0.1 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-Performance SLCFETs for Switched Filter Applications
FET-based switched filters do not occupy a large space in the literature due to the high loss of the switches relative to other technologies. The Super-Lattice Castellated Field Effect Transistor (SLCFET) is a low loss, high isolation, broadband RF switch that meets this need. A 4 channel tunable band pass filter employing SLCFET switches in a splitter/combiner network was fabricated in order to demonstrate the enabling capability of the SLCFET for this application. Each filter state employed a novel, high-Q LC circuit. The insertion loss of the MMIC passbands was around -6.5 dB, of which -1.3 dB was attributable to the six Single Pole Double Throw (SPDT) switches in the network. Breakout SPDTs were measured from 0.5 to 25 GHz. Measured insertion loss at 18 GHz was -0.41 ± 0.1 dB and isolation was -28.8 ± 0.1 dB, for 35 SPDTs on the wafer.
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