深阱对合成热致发光材料长余辉过程的重要贡献

Shashank Sharma
{"title":"深阱对合成热致发光材料长余辉过程的重要贡献","authors":"Shashank Sharma","doi":"10.54026/jmms/1049","DOIUrl":null,"url":null,"abstract":"A promising candidate of long persistent Ca2 MgSi2 O7 :Dy3+ phosphor sample was well sintered via traditional high temperature solid-state synthesis technique and characterized in terms of crystal structure, particle size, phase composition and TL trapping parameters have briefly discussed using X-Ray Diffraction (XRD), Field Emission Scanning Electron microscopy (FESEM), Energy Dispersive X-ray (EDX) Spectroscopy and TL-Dosimetry Reader techniques. The XRD results revealed that it has formed in a single phase and tetragonal crystallography (Akermanite crystal structure) with a space group P4̅21m. All trapping parameters such as activation energy (E) (i.e. trap depth), order of kinetics (b) and frequency factor (s), and all these trapping parameters were calculated using Chen’s glow curve method. In this present paper, structural & thermal properties of synthesized phosphor are discussed in detail. We have clearly observed that the trapped electrons in the crystal lattice site and the self-trapped hole that both are responsible for crystal growth process. Deeper traps are highly helpful for increasing the long persistent duration and afterglow process.","PeriodicalId":199420,"journal":{"name":"Journal of Mineral and Material Science (JMMS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Significant Contribution of Deeper Traps for Long Afterglow Process in Synthesized Thermoluminescence Material\",\"authors\":\"Shashank Sharma\",\"doi\":\"10.54026/jmms/1049\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A promising candidate of long persistent Ca2 MgSi2 O7 :Dy3+ phosphor sample was well sintered via traditional high temperature solid-state synthesis technique and characterized in terms of crystal structure, particle size, phase composition and TL trapping parameters have briefly discussed using X-Ray Diffraction (XRD), Field Emission Scanning Electron microscopy (FESEM), Energy Dispersive X-ray (EDX) Spectroscopy and TL-Dosimetry Reader techniques. The XRD results revealed that it has formed in a single phase and tetragonal crystallography (Akermanite crystal structure) with a space group P4̅21m. All trapping parameters such as activation energy (E) (i.e. trap depth), order of kinetics (b) and frequency factor (s), and all these trapping parameters were calculated using Chen’s glow curve method. In this present paper, structural & thermal properties of synthesized phosphor are discussed in detail. We have clearly observed that the trapped electrons in the crystal lattice site and the self-trapped hole that both are responsible for crystal growth process. Deeper traps are highly helpful for increasing the long persistent duration and afterglow process.\",\"PeriodicalId\":199420,\"journal\":{\"name\":\"Journal of Mineral and Material Science (JMMS)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-12-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Mineral and Material Science (JMMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.54026/jmms/1049\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Mineral and Material Science (JMMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.54026/jmms/1049","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

采用传统的高温固相合成技术烧结了一种有前途的长持久性Ca2 MgSi2 O7:Dy3+荧光粉样品,并利用x射线衍射(XRD)、场发射扫描电子显微镜(FESEM)、能量色散x射线(EDX)光谱和TL-剂量仪技术对其晶体结构、粒度、相组成和TL俘获参数进行了初步表征。XRD结果表明,其形成为单相四方晶(阿克尔曼石晶体结构),空间群为P4 ~ 21m。采用Chen辉光曲线法计算捕获参数,包括活化能(E)(即捕获深度)、动力学阶数(b)和频率因子(s)。本文详细讨论了合成的荧光粉的结构和热性能。我们已经清楚地观察到,晶格位置的捕获电子和自捕获空穴都是晶体生长过程的原因。较深的圈闭有助于延长持续时间和增加余辉过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Significant Contribution of Deeper Traps for Long Afterglow Process in Synthesized Thermoluminescence Material
A promising candidate of long persistent Ca2 MgSi2 O7 :Dy3+ phosphor sample was well sintered via traditional high temperature solid-state synthesis technique and characterized in terms of crystal structure, particle size, phase composition and TL trapping parameters have briefly discussed using X-Ray Diffraction (XRD), Field Emission Scanning Electron microscopy (FESEM), Energy Dispersive X-ray (EDX) Spectroscopy and TL-Dosimetry Reader techniques. The XRD results revealed that it has formed in a single phase and tetragonal crystallography (Akermanite crystal structure) with a space group P4̅21m. All trapping parameters such as activation energy (E) (i.e. trap depth), order of kinetics (b) and frequency factor (s), and all these trapping parameters were calculated using Chen’s glow curve method. In this present paper, structural & thermal properties of synthesized phosphor are discussed in detail. We have clearly observed that the trapped electrons in the crystal lattice site and the self-trapped hole that both are responsible for crystal growth process. Deeper traps are highly helpful for increasing the long persistent duration and afterglow process.
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