脉冲功率晶闸管热变化的研究

Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472) Pub Date : 2003-06-15 DOI:10.1109/PPC.2003.1277679

M. G. Hoffman, J. Dickens, M. Giesselmann

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引用次数: 1

摘要

本文研究了脉冲功率晶闸管(PPT)放电时和放电后的温度变化。所研究的PPT为SPT411BHT。SPT411BHT是由Silicon Power公司生产的5000 V, 4600 a, 125 mm晶闸管。为了确定PPT硅的温度，将具有相同热性能的125 mm二极管与PPT串联在一起。二极管的正向电压和硅温度之间有严格的关系。测量二极管放电前后的正向电压，可以准确预测硅的温升。峰值放电电流将在30ka到90ka之间变化。正向电压测量电路必须能够在共模电压超过2kv的情况下分辨毫伏电压。此外，电路必须将测量设备与电路隔离。本文将讨论温度测量的概念以及二极管正向电压测量电路的设计细节。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Investigation of pulse power thyristor thermal variations

This paper presents a study of temperature variations in a Pulse Power Thyristor (PPT) during and after discharge. The PPT studied was the SPT411BHT. The SPT411BHT is a 5000 V, 4600 A, 125 mm thyristor made by Silicon Power Corporation. In order to determine the temperature of the PPT silicon, a 125 mm diode with identical thermal properties is placed in series with the PPT. There is a strict relationship between the forward voltage and the silicon temperature of the diode. Measurement of the forward voltage of the diode before and after discharge will accurately predict the temperature increase of the silicon. Peak discharge currents will be varied from 30 kA to 90 kA. The forward voltage measurement circuit must be able to resolve millivolts in the presence of common mode voltages in excess of 2 kV. Also, the circuit must isolate the measurement equipment from the circuit. This paper will discuss the temperature measurement concept as well as the design details of the circuit used to measure the diode forward voltage.

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Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472)

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