{"title":"根据MIL-STD 883的GaAs MMIC c波段放大器的封装和特性","authors":"Ravi Gugulothu, S. Bhalke, S. Chaturvedi","doi":"10.1109/IMARC.2015.7411436","DOIUrl":null,"url":null,"abstract":"This paper presents the design of 50ohm microstrip line, modelling of the metal ceramic package, packaging and characterization of a GaAs MMIC die in the metal ceramic package with optimised interconnections and validation of its performance parameters. The packaged MMIC was characterized under various environmental conditions like temperature cycling, burn-in test and life tests at as per MIL-STD 883 standard. The MMIC performance was monitored before and after every test condition. The packaged amplifier MMIC resulted in good input /output return losses (better than 17dB), linear gain of 20dB, gain flatness of less than 0.5dB, P1dB of 12dBm. It has shown very low drift in gain of plus/minus 0.22dB against 1dB and variation of 1percent in Ids against 10percent.","PeriodicalId":307742,"journal":{"name":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Packaging and characterization of GaAs MMIC C-band amplifier as per MIL-STD 883\",\"authors\":\"Ravi Gugulothu, S. Bhalke, S. Chaturvedi\",\"doi\":\"10.1109/IMARC.2015.7411436\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of 50ohm microstrip line, modelling of the metal ceramic package, packaging and characterization of a GaAs MMIC die in the metal ceramic package with optimised interconnections and validation of its performance parameters. The packaged MMIC was characterized under various environmental conditions like temperature cycling, burn-in test and life tests at as per MIL-STD 883 standard. The MMIC performance was monitored before and after every test condition. The packaged amplifier MMIC resulted in good input /output return losses (better than 17dB), linear gain of 20dB, gain flatness of less than 0.5dB, P1dB of 12dBm. It has shown very low drift in gain of plus/minus 0.22dB against 1dB and variation of 1percent in Ids against 10percent.\",\"PeriodicalId\":307742,\"journal\":{\"name\":\"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"volume\":\"2015 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMARC.2015.7411436\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMARC.2015.7411436","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Packaging and characterization of GaAs MMIC C-band amplifier as per MIL-STD 883
This paper presents the design of 50ohm microstrip line, modelling of the metal ceramic package, packaging and characterization of a GaAs MMIC die in the metal ceramic package with optimised interconnections and validation of its performance parameters. The packaged MMIC was characterized under various environmental conditions like temperature cycling, burn-in test and life tests at as per MIL-STD 883 standard. The MMIC performance was monitored before and after every test condition. The packaged amplifier MMIC resulted in good input /output return losses (better than 17dB), linear gain of 20dB, gain flatness of less than 0.5dB, P1dB of 12dBm. It has shown very low drift in gain of plus/minus 0.22dB against 1dB and variation of 1percent in Ids against 10percent.
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