cu合金种子层高扩散掺杂剂抑制双峰应力诱导空化

Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695) Pub Date : 2003-06-02 DOI:10.1109/IITC.2003.1219758

T. Tonegawa, M. Hiroi, K. Motoyama, K. Fujii, H. Miyamoto

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引用次数: 14

摘要

研究了Cu合金(CuSn和CuTi)种子层中杂质掺杂Cu对Cu双砷互连中应力诱导空化的影响。观察到CuSn对过孔内和过孔下的排尿均有显著抑制。此外，CuSn的电迁移电阻是纯Cu的9倍，并且片状电阻可以增加。两种掺杂材料在可靠性改进方面的差异是由于与Ti相比，Sn向Cu的扩散率更高。我们在Cu合金种子层中使用高扩散掺杂剂证明了高可靠的Cu双大马士革互连。

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Suppression of bimodal stress-induced voiding using high-diffusive dopant from Cu-alloy seed layer

The effect of impurity doping to Cu from Cu-alloy (CuSn and CuTi) seed layer on stress-induced voiding in Cu dual-damascene interconnects has been investigated. Significant suppression of both voiding inside vias and under vias was observed for CuSn. In addition, CuSn had 9 times the electromigration resistance of pure Cu, with available increments of sheet resistance. The difference in terms of reliability improvement between the doping materials is due to higher diffusivity of Sn into Cu in comparison to Ti. We have demonstrated high reliable Cu dual-damascene interconnects using high-diffusive dopant in the Cu-alloy seed layer.

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Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)

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