130纳米CMOS技术的超低电压轨对轨比较器设计

L. Nagy, D. Arbet, M. Kovác, M. Potocný, V. Stopjaková
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引用次数: 5

摘要

本文提出了一种新颖的超低电压比较器拓扑结构,采用标准双孔130纳米CMOS技术设计了轨对轨输入电压范围和滞回可选电平。电源标称电压为0.4 V,工作温度范围设定为工业标准-20°~ 85°。所提出的比较器设计旨在在能量收集系统中工作。因此,低功耗是关键要求。比较器在输入级采用体积驱动晶体管,并在所谓的电流模式下工作。所设计的比较器电路在典型条件下功耗小于$5 \mu \mathrm {A}$,但其功能和鲁棒性已在所有可能的工艺和温度角上得到验证。该设计已提交给铸造厂进行制造,很快就可以得到测量数据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra Low-Voltage Rail-to-Rail Comparator Design in 130 nm CMOS Technology
The paper addresses a novel topology of ultra low-voltage comparator with rail-to-rail input voltage range and selectable level of hysteresis designed in a standard twin-well 130 nm CMOS technology. The nominal power supply voltage of 0.4 V was used, and the working temperature range was set to the industrial standard from -20 ° to 85 °. The proposed comparator design is intended to work in an energy harvesting system. Hence, low power consumption is the key requirement. The comparator employs bulk-driven transistors in the input stage and operates in so-called current mode. The designed comparator circuit draws less than $5 \mu \mathrm {A}$ in typical conditions but its function and robustness have been verified across all possible process and temperature corners. The design was submitted to foundry for manufacturing and the measured data can be expected soon.
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