新型100V额定功率MOSFET, VLMOS(垂直LOCOS MOS)的温度特性

2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs Pub Date : 2004-05-24 DOI:10.1109/WCT.2004.239756

M. Kodama, E. Hayashi, Y. Nishibe, T. Uesugi

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引用次数: 22

摘要

本文提出了一种新的100 V额定功率MOSFET，称为“VLMOS (vertical LOCOS MOSFET)”，并研究了该VLMOS在高温下的特性。通过仿真和实验结果，我们验证了它克服了“Si极限”，并且在比导通电阻方面具有优越的温度特性。这意味着VLMOS非常适合宽温度范围的操作，特别是汽车应用。

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Temperature characteristics of a new 100V rated power MOSFET, VLMOS (vertical LOCOS MOS)

In this paper, we proposed a new 100 V rated power MOSFET, called "VLMOS (vertical LOCOS MOSFET)", and investigated characteristics of the VLMOS under high temperature. From simulation and experimental results, we verified that it overcame the "Si limit" and had superior temperature characteristics in specific on-resistance. This means that the VLMOS is excellent for wide-temperature range operations, especially for automotive applications.

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2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs

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