Na和Ta掺杂cuu3ti4o12的结构和介电性能

International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014) Pub Date : 2014-05-26 DOI:10.1109/OMEE.2014.6912333

O. Shtonda, S. Loboda, A. Bogomolov

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引用次数: 0

摘要

制备了基于Na和Ta掺杂CCTO固溶体的新型陶瓷成分。研究了Na和Ta浓度对合成条件、晶体结构参数和低频介电性能的影响。用Na和Ta分别取代CCTO结构中的Ca和Ti得到固溶体，公式为Ca1-xNaxCu3Ti4-xTaxO12。替换方案适用于x从0到1的整个范围。Na和Ta掺杂CCTO陶瓷的烧结温度为理论密度的90 ~ 95%，低于未掺杂CCTO陶瓷的烧结温度。Ca1-xNaxCu3Ti4-xTaxO12陶瓷的介电常数随x的变化而变化，介电常数在2600 ~ 9700之间。介电损耗正切在0.1左右。

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Structure and dielectric properties of Na and Ta doped CaCu3Ti4O12

New ceramic compositions based on Na and Ta doped CaCu₃Ti₄O₁₂ (CCTO) solid solutions were obtained. The synthesis conditions, parameters of crystal structure and low frequency dielectric properties depending on Na and Ta concentrations were investigated. The solid solutions were obtained by substitution of Ca and Ti in the CCTO structure with Na and Ta, respectively, according to the formula Ca_1-xNa_xCu₃Ti_4-xTa_xO₁₂. The substitution scheme occurs in a whole range of x from 0 to 1. The sintering temperature of Na and Ta doped CCTO ceramics with 90-95% of theoretical density is lower than of undoped CCTO. 1 kHz dielectric permittivity of Ca_1-xNa_xCu₃Ti_4-xTa_xO₁₂ ceramics depends on x and varies from 2600 to 9700. Dielectric losses tangent is around 0.1.

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International Conference on Oxide Materials for Electronic Engineering - fabrication, properties and applications (OMEE-2014)

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