NRAM status and prospects

Advanced memory technology based on carbon nanotubes (NRAM) has been shown to possess desired properties for implementation in a host of integrated systems due to demonstrated advantages of its operation including high speed (Nanotubes can switch state in picoseconds), high endurance (over a trillion), and low power (with essential zero standby power). The applicable integrated systems have markets that will see compound annual growth rates (CAGR) of over 62% between 2018 and 2023, with an embedded systems CAGR of 115% in 2018 to 2023 [1]. These opportunities for NRAM technology are helping drive the realization of a shift from silicon to a carbon-based memory. NRAM is made up of an interlocking matrix of carbon nanotubes, either touching or slightly separated, leading to low or higher resistance states respectively. The small movement of atoms, as opposed to electrons for traditional memories, renders NRAM with a more robust endurance and high temperature retention/operation which, along with high speed/low power, is expected to blossom in this memory technology to be a disruptive replacement for the current status quo of DRAM (dynamic RAM), SRAM (static RAM), and NAND flash memories.